Electron Backscatter Diffraction
Electron backscatter diffraction (EBSD) is a very powerful tool for microstructure characterization.
EBSD is a technique based on scanning electron microscope (SEM) to provide crystallographic information on the microstructure of samples. In EBSD, the electron beam interacts with the inclined crystal sample to form a diffraction pattern. The diffraction pattern can be detected by the fluorescent screen, and it has the crystal structure and orientation characteristics of the sample. Therefore, diffraction patterns can be used to determine crystal structure and orientation, to distinguish different phases on crystals, to characterize grain boundaries, and to provide information about local crystallization integrity.
As one of the important characterization methods in material science research, EBSD technology has been widely used in various fields of material research, such as crystallographic orientation, recrystallization nucleation and growth mechanism, texture, phase transition and its orientation relationship, interface structure characteristics, crystal defect density, orientation and texture in adiabatic shear bands, etc., which is very important for researchers to deeply understand the essential relationship between material preparation process and microstructure-properties.
EBSD specific analysis function
- Microstructure analysis
- Orientation analysis
Grain size, uniformity, volume fraction of twins, recrystallized grains and subcrystals, analysis of grain boundary characteristics, phase identification, phase distribution, etc.
Orientation analysis of adjacent crystal grains, orientation analysis of crystal grains and adjacent twins, orientation analysis of twins and adjacent twins, texture analysis, misorientation analysis, etc.
Applications & industries
|Industries||Materials||Typical EBSD measurements|
|Metal research and processing||Metal, alloy||Grain size|
|Aerospace||Intermetallic compound||Grain boundary characterization|
|Automobile||Inclusions, precipitates, second phase||Bulk texture|
|Nuclear energy||Ceramics||Local texture|
|Microelectronics||Thin film||CSL grain boundary characterization|
|Earth science||Solar cell||Recrystallization or deformation rate|
|Scientific research field||Geology||Substructure analysis|
|Superconductor||Phase fraction and phase distribution|
|Metal and ceramic composites||Fracture analysis|
|Bones, teeth||Analysis of orientation and orientation difference between grains and phases|
- Basic requirements for samples that can be directly used for EBSD data collection
- Sample size requirements
The sample can produce a Kikuchi diffraction pattern that can be recognized by the computer and can be calibrated correctly. The surface is flat, clean, free of residual stress, good conductivity, and suitable in size. For data acquisition and processing, it is necessary to provide the phase, crystal structure and atomic occupation information of each phase in the sample, element species, etc., as well as crystallographic information: crystallographic database, ICCD, or pierce manual, then there is the PDF card for XRD calibration. If it does not meet the direct test requirements, it is necessary to select an appropriate sample preparation method.
The shape is regular, the size is not easy to be too large, length < 8 mm, width < 8 mm, thickness < 3 mm, the test surface needs to be smooth, without obvious scratches. If the size is larger, please wire-cut it in advance. If you need our wire-cutting, please contact our project manager.
Advantages of T,C&A Lab
- Professional and complete sample preparation equipment.
- Variety of SEM+EBSD equipment.
- Full-time, professional EBSD engineers are personally responsible.
- Strong data analysis ability and solid material research background.
- Panda, Subrata, et al. Effect of strain heterogeneities on microstructure, texture, hardness, and H-activation of high-pressure torsion Mg consolidated from different powders. Materials 11.8 (2018): 1335.
Note: this service is for Research Use Only and Not intended for clinical use.
- Atomic Absorption Spectroscopy (AAS)
- Atomic Force Microscope
- Auger Electron Spectroscopy
- Electron Backscatter Diffraction
- Energy Dispersive Spectrometer (EDS)
- Focused Ion Beam (FIB)
- Fourier Transform Infrared Spectroscopy (FTIR)
- Gas Chromatography - Mass Spectrometry (GC-MS)
- Gel Permeation Chromatography (GPC)
- Glow Discharge-Mass Spectrometry (GD-MS)
- IGA Gas Adsorption System
- Inductively Coupled Plasma-Mass Spectrometry (ICP-MS)
- Ion Chromatography (IC)
- Laser Ablation-Inductively Coupled Plasma Mass Spectrometer (LA-ICP-MS) System
- Nuclear Magnetic Resonance (NMR)
- Raman Spectrometer
- Rutherford Backscattering Spectrometry (RBS)
- Scanning Electron Microscope (SEM)
- Secondary Ion Mass Spectroscopy (SIMS)
- Thin-Layer Chromatography (TLC)
- Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
- Total Reflection X-ray Fluorescence
- X-Ray Diffraction (XRD)
- X-Ray Fluorescence (XRF)
- X-ray Reflectivity (XRR)