Rutherford Backscattering Spectrometry (RBS)
Rutherford backscattering analysis is a simple, quantitative, reliable, and non-destructive analysis method for solid surface layers and films. It is the most widely used microanalysis technique among many ion beam analysis techniques. Since Rutherford backscattering was first applied to the analysis of elements on the lunar surface in the middle and late 1960s, it has developed into a conventional method for analyzing impurity composition, content and depth distribution, and film thickness. It plays an important role in the interdisciplinary research in the fields of materials, microelectronics, thin film physics, energy and so on.
Our well-equipped testing laboratory conducts RBS testing for customers in the United States and other parts of the world. We not only perform regular tests at T,C&A Lab, but also conduct customized tests in our lab according to the specific requirements of our customers.
Serving industries in the U.S. and other countries
- Aerospace and aviation
- National defense
- Display device
- Advanced materials
- Coatings and films
Advantages of RBS Analysis
- Non-destructive component analysis.
- Non-standard quantitative analysis.
- Whole wafer (150, 200, 300 mm) and unconventional large samples.
- Conductor and insulator analysis.
- Light element measurement.
Applications of RBS Analysis
- In thin film physics, the film thickness, composition ratio, interfacial atomic distribution and atomic mixing are measured.
- Determination of the concentration and distribution of impurities or doped elements in the study of modification of semiconductor devices and various materials.
- In the basic research of the interaction between ions and solids, the energy loss and range of ions are measured.
- Combined with the channeling effect of ions in the single crystal sample, RBS can determine the defects and damage of the single crystal sample and determine the position of impurities in the lattice.
- RBS can also be combined with other ion beam analysis methods, such as proton induced X-ray fluorescence analysis and forward recoil analysis, to monitor the samples in the same target chamber at the same time.
Our RBS lab can provide you with the following services
- Thin film analysis
- Thickness measurement
- Component analysis
- Thin film reaction, interfacial atomic migration
- Impurity analysis
- Analysis of surface impurity concentration
- Analysis of impurity layer by ion implantation
- Analysis of bulk doping impurities
- Other capabilities
- Measurement of ion energy loss and energy divergence
- In cooperation with channeling technology, the study of single crystal samples
- The samples for backscatter analysis are generally thin films or solid samples such as semiconductors and metals with a smooth and clean surface.
- For insulating materials such as ceramics, in order to prevent the accumulation of surface charges, a conductive layer (such as Al film) of several to tens of nanometers should be deposited on the surface.
- The organic membrane material is easily damaged after being bombarded by the beam. In the analysis, the beam intensity should be used as small as possible for the experiment.
- Because the analysis beam spot is small, the sample size only needs to be about 5 mm×10 mm.
- The thickness of the sample (including the substrate) is generally between 0.5 and 2 mm. In conventional backscatter analysis, the sample depth that can be analyzed is between several hundreds of nanometers and 1 µm.
- Several samples can be installed on the sample rack at the same time, without breaking the vacuum of the target chamber, just by moving the sample rack, these samples can be analyzed one by one.
In conclusion, T,C&A Lab can offer RBS services that can solve materials testing related problem. Finally, please complete the form to have an expert discuss your needs.
Note: this service is for Research Use Only and Not intended for clinical use.
- Atomic Absorption Spectroscopy (AAS)
- Atomic Force Microscope
- Auger Electron Spectroscopy
- Electron Backscatter Diffraction
- Energy Dispersive Spectrometer (EDS)
- Focused Ion Beam (FIB)
- Fourier Transform Infrared Spectroscopy (FTIR)
- Gas Chromatography - Mass Spectrometry (GC-MS)
- Gel Permeation Chromatography (GPC)
- Glow Discharge-Mass Spectrometry (GD-MS)
- IGA Gas Adsorption System
- Inductively Coupled Plasma-Mass Spectrometry (ICP-MS)
- Ion Chromatography (IC)
- Laser Ablation-Inductively Coupled Plasma Mass Spectrometer (LA-ICP-MS) System
- Nuclear Magnetic Resonance (NMR)
- Raman Spectrometer
- Rutherford Backscattering Spectrometry (RBS)
- Scanning Electron Microscope (SEM)
- Secondary Ion Mass Spectroscopy (SIMS)
- Thin-Layer Chromatography (TLC)
- Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
- Total Reflection X-ray Fluorescence
- X-Ray Diffraction (XRD)
- X-Ray Fluorescence (XRF)
- X-ray Reflectivity (XRR)