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  • Secondary Ion Mass Spectroscopy (SIMS)

    Secondary Ion Mass Spectroscopy (SIMS) is widely used to analyze trace elements in solid materials, especially semiconductors and thin films.

    SIMS is one of the most important components in modern surface analysis technology. It is a surface analysis technique which uses the primary ion beam to bombard the material surface and uses the mass spectrometer to detect the mass-charge ratio of the sputtered secondary ions with positive and negative charge, so as to obtain the composition of the elements on the sample surface. Secondary ion mass spectrometer has the advantages of high sensitivity and good stability. It can analyze all elements in the periodic table, including hydrogen, and can also quantify trace impurity elements.


    When the sample surface is bombarded by high-energy focused primary ions, the kinetic energy is transferred to the solid atoms by primary ion implantation, which leads to the sputtering of neutral particles and positively and negatively charged secondary ions through cascade collision. According to the quality signal of the sputtered secondary ions, the surface and internal element distribution characteristics of the bombarded samples were analyzed.

    Secondary Ion Mass Spectroscopy (SIMS)

    Main features

    • Strengths
      • The detection limit can reach the order of ppm or even ppb.
      • Can detect all elements and isotopes, including hydrogen.
      • Analysis of the composition of compounds and the structure of organic macromolecules.
      • Get the surface information of the sample.
      • It can carry out the imaging of micro-area composition and depth profile analysis.
    • Shortcomings
      • The quantitative analysis is poor, and it is difficult to read the spectrum.
      • A flat surface is required for analysis.
      • Belong to destructive analysis technology.


    • Identify the inorganic or organic layer on the surface of metal, glass, ceramic, film or powder.
    • The concentration distribution of oxide surface layer, corrosion film, leaching layer and diffusion layer along the depth.
    • The concentration distribution of trace dopants (≤1000 ppm) along the depth of the semiconductor material by diffusion or ion implantation.
    • Hydrogen concentration and distribution along depth in embrittlement metal alloys, vapor-deposited films, hydrated glass and minerals.
    • Quantitative analysis of trace elements in solids.
    • Analyze the abundance of isotopes in geological samples and silver-containing samples.
    • Use isotope-enriched materials for tracing studies (such as studying diffusion and oxidation).
    • Phase distribution in minerals, multiphase ceramics and metals.
    • The second phase distribution caused by grain boundary segregation, internal oxidation or precipitation.

    The capabilities of T,C&A Lab include:

    • Depth analysis of dopants and impurities.
    • Measurement of film composition and impurities (metal, dielectric, Si, III-V and II-VI materials).
    • Ultra-high resolution depth analysis of shallow implantation and ultrathin films.
    • Block analysis, including B, C, O and N elements in Si.
    • Chip analysis, qualitative and quantitative analysis of chip structure and impurity elements, including LED chips, power devices, SiC, gallium oxide and other semiconductor chips.

    T,C&A Lab is a scientific research testing laboratory, providing secondary ion mass spectrometry (SIMS) analysis and testing services. The SIMS analysis and testing data will be issued in about 3-7 working days. If you need anything, please feel free to contact us.


    1. Huang, D.; et al. Secondary ion mass spectrometry: The application in the analysis of atmospheric particulate matter. Analytica chimica acta 989 (2017): 1-14.

    Note: this service is for Research Use Only and Not intended for clinical use.

    T,C & A LAB is an independent lab providing quality or custom testing, characterization and analysis of a variety of materials. Our engaged experts are ready to help you.

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